ghz technology inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) described herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory. ghz technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 1417 - 12a 12 watt - 28 volts, class c microwave 1400 - 1700 mhz general description the 1417-12A is a common base transistor capable of providing 12 watts of class c, rf output power over the band 1400-1700 mhz. this transistor is designed for microwave broadband class c amplifier applications. it includes input prematching and utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. the transistor uses a fully hermetic high temperature solder sealed package. case outline 55lv, style 1 absolute maximum ratings maximum power dissipation @ 25 c 29 watts o maximum voltage and current bvces collector to emitter voltage 50 volts bvebo emitter to base voltage 3.5 volts ic collector current 2.0 a maximum temperatures storage temperature - 65 to + 200 c o operating junction temperature + 200 c o electrical characteristics @ 25 c o symbol characteristics test conditions min typ max units pout pin pg h c vswr 1 power out power input power gain collector efficiency load mismatch tolerance f = 1.4-1.7 ghz vcb = 28 volts pin = 2.4 watts as above f = 1.7 ghz, pin = 2.4 w 12.0 7.0 8.7 40 2.4 30:1 watt watt db % bvces bvebo icbo h fe cob q jc collector to emitter breakdown emitter to base breakdown collector to base current current gain output capacitance thermal resistance ic = 80 ma ie = 2.0 ma vcb = 28 volts vce = 5 v, ic = 800 ma f =1.0 mhz, vcb = 28 v 50 3.5 20 12 2.0 6.0 volts volts ma pf c/w o issue february 1996
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